期刊文献+

基于离子交换技术的表面传导电子发射源制备 被引量:4

Fabrication of Surface-Conduction Electron-Emitters by Ion Exchange Technology
下载PDF
导出
摘要 本文介绍了采用离子交换技术制作表面传导电子发射源的原理和方法,应用离子交换技术制作了发射材料为金属Pd的表面传导电子发射源。分别研究了加电形成工序和激活工序中器件电流、发射电流随器件电压的变化规律,测试了电子发射性能,结果表明:发射电流存在阈值电压,即在器件电流达到最大值时的器件电压;最大发射效率有一个电压区间,在这个电压区间内,器件电流处于最低平台阶段,而发射电流达到稳定高电流阶段。 We addressed the fabrication of sttrface-conduction emitter for the development of the surface-conduction emitter display (SED) by using ion exchange technology. The SED electron emission source was made of palladium. The impacts of the emitter fabrication processes, such as y, sintering, activation of the conduction films, etc., on its field emission characteristics were studied. The relationship between the emission current and the device voltage were ex- perimentally evaluated. The results show that a threshold voltage can be found to correlate with the emission current, within which the emission efficiency maximizes with steady peak emission current and the device current remains at the lower step.
出处 《真空科学与技术学报》 EI CAS CSCD 北大核心 2010年第6期577-581,共5页 Chinese Journal of Vacuum Science and Technology
基金 国家高技术研究发展专项经费资助(2009AA03Z307)
关键词 SED 光刻 离子交换 电子发射 SED, Photoetching, Ion exchange, Electron emission
  • 相关文献

参考文献8

  • 1梁志虎,张小宁,刘纯亮.AC PDP高阻维持驱动方法[J].真空科学与技术学报,2009,29(4):351-354. 被引量:1
  • 2Yamamoto K, Nomura I, Yamazaki K, et al. Fabrication and Characterization of Surface Conduction Electron Emitters[ C]. SID 05 Digest,2005 : 1933 - 1935.
  • 3Oguchi T, Yamaguchi E, Sasaki K, et al. A 36 - Inch Surface- Conduction Electron-Emitter Display [ C ]. SID 05 Digest, 2005 : 1929 - 1931.
  • 4Liang H F, Liu C L, Liang Z H, et al. Electron Emission Characteristics of Al-AlN Granular Films[J]. Applied Surface Science, 2008,254 (21) : 6922 - 6927.
  • 5Wu S L, Wang C L, Zhang J T, et al. Surface Conduction Electron Emission from ZnO Film[ J]. IEICE Transactions on Electronics, 2008, E91-C(10) : 1554 - 1556.
  • 6吴凯,李德杰.一种新型的表面传导电子发射阴极[J].真空科学与技术学报,2006,26(5):339-342. 被引量:8
  • 7孙宏博,吴胜利.表面传导电子发射显示器电子发射源制作技术[J].真空电子技术,2007,20(6):41-45. 被引量:2
  • 8下田卓,寺田匡宏,森省城.表面传导型电子发射元件及图像形成装置的制造方法[P].中国:200310102497.X,2004-05-26.

二级参考文献10

  • 1梁志虎,刘纯亮,刘祖军.AC-PDP放电特性参量及其测量[J].真空科学与技术学报,2005,25(1):14-17. 被引量:4
  • 2Elinson M I. The emission of hot electrons and the field emission of electrons from tin oxide. Radio Eng. Electron Physics, 1964,10:1290 - 1296
  • 3Oguchi T. A 36-inch surface-conduction electron-emitter display(SED). SID 05 DIGEST, 2005 : 1929 - 1931
  • 4Yamamoto K. Fabrication and characterization of surface conduction electron emitters. SID 05 DIGEST,2005: 1933- 1935
  • 5Oguchi T, Yamaguchi E, Sasaki K, et al. A 36-inch Surface-Conduction Electron-Emitter Display (SED) [C]. SID 05 DIGEST, 2005. 1929-1931.
  • 6Yamamoto K, Nomura I, Yamazaki K, et al. Fabrication and Characterization of Surface Conduction Electron Emitters [C]. SID05 DIGEST, 2005. 1933-1935.
  • 7[日]下田卓,寺田匡宏,森省诚.表面传导型电子发射元件及图像形成装置的制造方法[P].中国专利:200310102497.X,2004-05-26.
  • 8[日]岩城孝志,水野事占信,柴田雅章,等.电子发射器件,电子源,以及制造图像形成装置的方法[P].中国专利:200410047344.4,2004-11-17.
  • 9[日]长谷川光利.导电膜和电子发射器件的生产方法[P].中国专利:02132210.4,2004-12-01.
  • 10杜春艳,梁志虎,刘纯亮.维持电压脉宽和频率对AC-PDP放电特性的影响[J].真空科学与技术,2003,23(2):107-110. 被引量:1

共引文献8

同被引文献39

  • 1孙宏博,吴胜利,张劲涛.SED的磁控溅射法制作技术试验研究[J].真空电子技术,2008,21(2):30-33. 被引量:3
  • 2吴凯,李德杰.一种新型的表面传导电子发射阴极[J].真空科学与技术学报,2006,26(5):339-342. 被引量:8
  • 3Ichihara T, Baba T, Komoda T, et al. Correlation between Nanostructure and Electron Emission Characteristics of a Ballistic Electron Surface-Emitting Device[ J]. J Vac Sci Technol, 2004,1322(3) : 1372 - 1376.
  • 4Ichihara T, Hatai T, Aizawa K, et al. Key Role of Nanocrystalline Feature in Porous Polyerystalline Slicon Diodes for Efficient Ballistic Electron Emission [ J ]. J Vac Sci Technol, 2004,1322(1) : 57 - 59.
  • 5Komoda T,Ichihara T, Honda Y,et al. Fabrication of a 7.6- in.-Diagonal Prototype Ballistic Electron Surface-Emitting Display on a Glass Substrate[ J] .Journal of the Society for Information Display, 2004,12( 1 ) : 29 - 35.
  • 6Hart S K, Kwon S I,Bae S C,et al. Effects of the Thermal Annealing on the Field Emission Characteristics of an Oxidized Porous Polysilicon Field Emitter[ J ]. 11th International Display Workshops ( IDW' 04), Japan: Niigata, 2004:1233 - 1236.
  • 7Sakai D, Oshima C,Ohta T,et al. Specfic Spectral Features in Electron Emission from Nanocrystalline Silicon Quasi-Ballistic Cold Cathode Detected by An angle-Resolved High Resolution Analyzer[ J ]. J Vac Sci Technol, 2008, B26 (5) : 1782 - 1786.
  • 8Ohta T, Kojima A, Koshida N. Emission Characteristics of Nanocrystalline Porous Silicon Ballistic Cold Cathode in Atmospheric Ambience [ J ]. J Vac Sci Technol, 2007, B25 (2) : 524 - 527.
  • 9Dubin V M. Formation Mechanism of Porous Silicon Layers Obtained by Anodization of Monocrystalline n-Type Silicon in HF Solutions[ J]. Surface Science, 1992,274( 1 ) :82 - 92.
  • 10Chuang S F, Collins S D, Smith R L. Preferential Propagation of Pores during the Formation of Porous Silicon: a Ttransmission Electron Microscopy Study[ J]. Appl Phys Lett, 1989,55 (7) :675 - 677.

引证文献4

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部