北京正负电子对撞机次级束模拟质子单粒子效应分析

ANALYSIS OF USING PROTONS IN SECONDARY BEAM ON BEPC AS A PARTICLE SOURCE IN SINGLE EVENT EFFECTS EXPERIMENT STUDY

首次从利用高能电子打靶产生的质子进行半导体器件的单粒子效应（ＳＥＥ）实验研究的角度分析了北京正负电子对撞机（ＢＥＰＣ）次级束中的质子的能量范围和产额，计算了３种途径下高能电子打靶产生的质子的能量范围，估算了反应截面。研究表明：选取重核做靶可以不同程度地提高质子产生截面，质子的微分产额（ｄ２ＹｄＥｄΩ）可达１．６６×１０－３ｓ－１·ｓｒ－１·ｅＶ－１。可以用ＢＥＰＣ次级束中的质子做翻转截面比较大（σ＝１０－８ｃｍ２）的半导体器件的单粒子效应实验研究。

The energy range and yield of the protons in the secondary beam on BEPC are first analyzed,at the point of using the protons as a particle source in the single event effects(SEE) experiment of semiconductor devices. The energy ranges of the proton produced by high energy electrons bombarding on targets in three methods are calculated and the correspon ding cross sections are estimated. The cross section of producing protons can be increased by using heavy nucleus target and the differential yield of protons can reach 1.66×10 -3 s -1 ·sr -1 ·eV -1 . The protons can be used in SEE experiment of the semiconductor devices with the high SEE cross sections.