摘要
以SPAD等效电路为基础建立了简单实用的SiPM的电子学模型,对模型中各电学参数及其对器件性能的影响进行了详细探讨,并以日本滨松公司的MPPC器件为例介绍了模型参数的提取方法。该电子学模型可应用于SiPM器件性能优化和前端电子学设计。
Based on the equivalent circuit of a SPAD,we have established a simple and useful electrical model of SiPM,and the model parameters' Effects to the detector's performance are discussed in detail.An extraction procedure for the parameters involved in this model is proposed,based on suitable measurements performed on a MPPC detector of HAMAMATSU.The work is helpful to SiPM device optimizing and properly design of the front-end electronics.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2010年第10期1329-1333,共5页
Nuclear Electronics & Detection Technology
基金
国家自然科学基金资助项目(10775016)