摘要
量子阱红外探测器由于具有更高的材料均匀性和成品率,是红外探测技术研究的重点方向之一。本文通过突破材料外延、器件制备工艺、读出电路设计以及倒装互连等关键工艺技术,研制了长波640×512元GaAs/A lGaAs量子阱红外焦平面探测器。77 K下,器件的平均黑体响应率Rv为1.4×107V/W,峰值探测率Dλ*为6.2×109cm Hz1/2W-1,器件的盲元率达到了0.87%,响应率不均匀性5.8%,并在77 K下对探测器进行成像演示。
Quantum well infrared photodetector（QWIP）is an important direction in infrared detector research,for its excellent uniformity and high yield.After solving key technology such as material epitaxy,preparation of device,design of read-out circuit and flip-chip bending,long wavelength 640×512 GaAs/AlGaAs Quantum Well Infrared photodetctor（QWIP）was developed.At 77 K,the average blackbody responsibility Rv is 1.4×107 V/W,and the peak blackbody detectivity Dλ＊ is 6.2×109 cm Hz1/2W-1.The ratio of dead pixels is 0.87%,and the non-uniformity of responsibility is 5.8%.The infrared image of focal plane array is presented at 77 K.
出处
《激光与红外》
CAS
CSCD
北大核心
2010年第11期1220-1223,共4页
Laser & Infrared
关键词
量子阱
焦平面
长波
quantum well
focal plane arrays
long wavelength
