弯曲磁过滤电流对TiN膜质量的影响

Influence of magnetic filtering current on TiN thin film quality

为研究弯曲磁过滤弧离子镀工艺的磁过滤电流变化对薄膜质量的影响,用弯曲磁过滤弧离子镀工艺在3.0～4.5A内变化磁过滤电流制备了TiN薄膜样品,用扫描电子显微镜观察了薄膜表面与截面形貌,用X射线衍射研究了薄膜的组织结构,从等离子体角度分析了磁过滤电流对薄膜表面质量、结晶质量等薄膜质量及生长速率的影响.结果表明,引入磁过滤后,因去除大颗粒的结果使薄膜表面均很光滑,且表面大颗粒的尺寸与磁过滤电流的大小关系不大.当磁过滤电流为4.0A时,TiN薄膜结晶良好、膜基结合紧密,生长速率达到最大的1.1μm/h,且具有很强的[200]择优取向.在4.0A磁过滤电流下制备的TiN薄膜所呈现的质量特性是由于此电流下等离子体密度与能量高、基体的位置又正好处于聚集的等离子体区域中心.

Effects of changing magnetic filtering current on the quality of TiN films were investigated by arc ion plating technique with a curved magnetic filter（CMFAIP） in this paper.TiN films were fabricated with CMFAIP technique,characterized for morphology and sectional structure with scanning electron microscope and for texture with X-ray diffraction.Influence of magnetic filtering current on the film quality like surface quality and crystal quality,and growth rate was studied under the plasma theory.At different currents,with the macroparticles filtered,the macroparticle sizes were almost constant and the film surface was very smooth.With [200] preferred orientation and fine crystallization as well as tight cohesion between film and substrate,the growth rate for the wear-resistant TiN films was the highest at the magnetic filtering current of 4.0 A.This quality characteristic of TiN films at the current of 4.0 A is induced by the high energy and density of plasma,and the substrate being placed at the center of plasma zone.