期刊文献+

新型SnO_2/WO_3双层薄膜NO_2敏感性能研究

New SnO_2/WO_3 double layer thin film for NO_2 sensor
下载PDF
导出
摘要 采用射频磁控反应溅射锡(Sn)靶和钨(W)靶的方法制备了SnO2/WO3双层薄膜材料,通过XRD和XPS实验研究了双层薄膜的物相结构和组份,结果表明,SnO2/WO3双层薄膜经过热处理后形成了SnWO4化合物.在此基础之上,制作了相应的NO2气体敏感薄膜传感器,研究了双层薄膜传感器的制备工艺参数及工作条件对传感器性能的影响,研究了传感器的敏感特性,包括灵敏度、选择性、响应恢复等特性.结果表明,传感器对NO2气体有较好的敏感性,对其他干扰气体不敏感. The SnO2/WO3 double layer thin film was prepared by magnetron sputtering in which a tin(Sn) target and a tungsten(W) target were operated in radio frequency(RF) reactive mode.The crystallographic structure of the composite was investigated by X-ray diffraction(XRD) and X-ray photoelectron spectroscopy(XPS).Results reveals that the SnWO4 is formed by SnO2 and WO3.The sensor using the SnO2/WO3 double layer thin film was prepared,the preparation technology parameter,operated condition and the gas-sensing properties of the SnO2/WO3double layer thin film sensor,such as sensitivity,selectivity,response and recovery,were researched.The results indicate that the sensor has the good sensitivity to NO2 gas,and is insensitive to other disturbance gases.
出处 《材料科学与工艺》 EI CAS CSCD 北大核心 2010年第5期719-723,728,共6页 Materials Science and Technology
基金 国家高技术发展计划资助项目(项目号2007AA03Z325) 科技部863项目的支持(项目号:2007AA03Z325)
关键词 SnO2/WO3 薄膜 磁控溅射 NO2 SnO2/WO3 thin film magnetron sputtering NO2
  • 相关文献

参考文献18

  • 1PENZA M, VASANELLI L. SAW NOx gas sensor using WO3 thin films sensitive coating [ J ]. Sensors and Actuators, B41,1997,31-36.
  • 2SANTOS J, SERRINI P, et al. A thin film SnO2 gas sensor selective to ultra- low NOxconcentrations in air [ J]. Sensors and Actuator, IM3 ,1997 ,154 - 160.
  • 3MIURA N, YAN Y, LU G, et al. Sensing characteristics and mechanism of hydrogen sulfide sensor using stabilized zirconia and oxide sensing electrode [ J ]. Sensors and Actuators, B34,1996,367 - 372.
  • 4A CABOT, J ARBIOL, J R MORANT, et al. Analysis of the noble metal catalytic additives introduced by impregnation of as obtained SnO2 sol-gel nanocrystals for gas sensors [ J] , Sens. Actuators B: Chem. 70,2000, 87-100.
  • 5K AGUIR, C LEMIRE, D B B LOLLMAN. Electrical properties of reactively sputtered WO3 thin films as ozone gas sensor [ J ], Sens. Actuators B 84 ( 1 ),2002,1-5.
  • 6张小水,范子亮,阎玉卿,王利利,吴志敏.铼掺杂WO3材料的VOCs气敏特性[J].陶瓷学报,2008,29(3):267-271. 被引量:3
  • 7TONGMAOSONG, DA GUORUI, WU YUANDA, et al. WO3 thin film prepared by PECVD technique and its gas sensing properties to NO2 [ J ]. journal of Materials Science, 36,2001,2535 - 2538.
  • 8牛新书,刘艳丽,胡平,徐甲强.共沉淀法SnO_2-WO_3粉体的气敏性能研究R&D[J].电子元件与材料,2002,21(1):10-12. 被引量:16
  • 9林伟,黄世震,陈文哲.射频反应磁控溅射SnO_2/MWCNTs薄膜材料的气敏性能研究[J].传感技术学报,2009,22(6):771-775. 被引量:5
  • 10Y S SHEN,T S ZHANG. Preparation, structure and gas - sensing properties of uhramicro ZnSnO3 powder [ J] , Sensors and Actuators B 12,1993,5-9.

二级参考文献39

  • 1朱永法,叶小燕,姚文清,陈德朴,曹立礼.Ar离子束作用下C_(60)薄膜的结构稳定性研究[J].物理化学学报,1995,11(8):699-703. 被引量:2
  • 2徐甲强,安春仙,李宝凤,朱文会.低温选择性硫化氢气敏元件的研制 ̄①[J].云南大学学报(自然科学版),1997,19(1):76-78. 被引量:10
  • 3方国家,刘祖黎,张杰,姚凯伦.ZrO_2掺杂对SnO_2薄膜电性及气敏性的影响[J].无机材料学报,1997,12(1):59-64. 被引量:8
  • 4Shaver P J. Activated WO3 gas detector. Appl Phys Lett,1967, 11:255 -230
  • 5方国家,刘祖黎,张增常,王昕玮,姚凯伦.Ce掺杂对SnO_2薄膜电学及气敏性能的影响[J].中国稀土学报,1997,15(1):11-15. 被引量:11
  • 6Someya T, Small J, Kim P, Nuekolls C, Yardley J T. Alcohol Vapor Sensors Based on Single-Walled Carbon Nanotube Field Effect Transistors[J]. Nano Lett. 3 (2003) 877-881.
  • 7Li J, Lu Y, Ye Q, Cinke M, Han J, Meyyappan M. Carbon Nanotube Sensors for Gas and Organic Vapor Detection[J]. Nano Lett. 3 (2003) 929-933.
  • 8Ioneseu R, Espinosa E H, Sotter E, Llobet E, Vilanova X, Correig X, Felten A, Bittencourt C, Van Lier G, Charlier J C, Pireaux J J, Oxygen Functionalisation of MWNTand Their Use as Gas Sensitive Thick-Film Layers[J]. Sens. Actuator B 113 (2006) 36-46.
  • 9Collins P G, Bradley K, Ishigami M, Zettl A, Science[J]. 287 (2000) 1801.
  • 10Kong J, Franklin N R, Zhou C, Chapline M G, Peng S, Cho K,Dai H, Science[J]. 287 (2000) 622.

共引文献30

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部