溶胶-凝胶法制备Ba_(0.90)Sr_(0.10)Zr_xTi_(1-x)O_3成分梯度薄膜的介电性能

DIELECTRIC PROPERTIES OF COMPOSITIONALLY GRADED Ba_(0.90)Sr_(0.10)Zr_xTi_(1-x)O_3 THIN FILMS PREPARED BY THE SOL-GEL TECHNIQUE

采用溶胶-凝胶法在Pt(111)/Ti/SiO2/Si衬底上制备Ba0.90Sr0.10ZrxTi1-xO3(BSZT)(x=0～0.40)组分及其成分梯度薄膜,研究各组分及梯度薄膜的相结构、显微结构及其介电性能。结果表明:随着Zr含量的增加,组分BSZT薄膜的相对介电常数(εr)和介电损耗(tanδ)降低,Curie温度向低温方向移动。与单相薄膜相比,成分梯度薄膜同时具有适中的相对介电常数(150<εr<300),低的介电损耗(tanδ<0.014),高的材料优值(>30)及良好的温度稳定性。

Homogenous Ba0.90Sr0.10ZrxTi1-xO3（BSZT）（x = 0-0.40） and compositionally graded BSZT thin films were deposited on Pt（111）/Ti/SiO2/Si by the sol-gel processing.Phase structure,microstructure and dielectric properties of homogenous BSZT and compositionally graded BSZT thin films were investigated.The results show that relative dielectric constant（εr） and dielectric loss（tan δ） of homogenous BSZT thin films decrease and the Curie temperature shifts to a lower temperature with the increase of Zr content.Compared to homogenous BSZT thin films,the compositionally graded BSZT thin films show a moderate relative dielectric constant（150εr300）,lower dielectric loss（tan δ0.014）,higher material figure of merit（30）,and better temperature stability.