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锰掺杂无铅压电陶瓷(Bi0.5Na0.5)0.9Ba0.07Sr0.03TiO3的结构和电学性能(英文)

STRUCTURE AND ELECTRICAL PROPERTIES OF Mn-DOPED LEAD-FREE PIEZOELECTRIC CERAMICS(Bi_(0.5)Na_(0.5))_0.9Ba_(0.07)Sr_(0.03)TiO_3
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摘要 采用传统陶瓷工艺制备掺MnO2的(Bi0.5Na0.5)0.9Ba0.07Sr0.03TiO3(BNBST)无铅压电陶瓷。锰掺杂(MnO2摩尔掺量x=0~1.25%)可以提高陶瓷的烧结性能,在1150℃烧结,可以得到致密陶瓷和纯的钙钛矿相。X射线衍射显示:室温、0.20<x<0.75时,形成四方相与三方相共存的准同型相界(morphotropic phase boundary,MPB),且x=0.25时,锰掺杂的BNBST陶瓷表现出优良的性能,其中压电常数d33=157pC/N,平面机电耦合系数kp=33%,机械品质因数Qm=364,相对介电常数εr=843,介电损耗tanδ=2%。这些结果确认了MPB组成与x之间的相互关系,并为设计新型压电材料提供方法。 Lead-free piezoelectric ceramics(Bi0.5Na0.5)0.9Ba0.07Sr0.03TiO3(BNBST) doped with MnO2 were fabricated with the solid-state reaction technique.With Mn(x(MnO2) = 0-1.25%,mole fraction,the same below) doping,all the ceramics can be well sintered at 1 150 ℃ and exhibit a dense and pure perovskite structure.The X-ray diffraction patterns indicate that a morphotropic phase boundary(MPB) between tetragonal and rhombohedral phases exists at 0.20x0.75,and the Mn-doped BNBST ceramic with x = 0.25 exhibits excellent properties,where piezoelectric constant d33 = 157 pC/N,electromechanical coupling factor kp = 33%,mechanical quality factor Qm = 364,relative dielectric constant εr = 843,and dielectric loss tan δ = 2%.These results confirm the relationship between the MPB composition and x and thus provide a method for designing new piezoelectric materials.
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2010年第12期2353-2356,共4页 Journal of The Chinese Ceramic Society
基金 安徽省教育厅青年教师科研资助计划(2007JQl148) 江苏省无机及其复合新材料重点实验室开放课题(Wjjqfhxc-l200703) 安徽省高等学校优秀青年人才基金(2010SQRL156) 合肥学院科研发展基金(07KY001ZR)资助项目
关键词 锰掺杂 微观结构 压电性能 介电性能 manganese-doping microstructure piezoelectricity dielectric properties
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参考文献15

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