GaInSb/GaSb量子阱结构的低温光致发光谱

PHOTOLUMINESCENCE OF GaInSb/GaSb QUANTUM WELL STRUCTURES

ＧａＩｎＳｂ三元合金半导体可用于制作工作于１．５５～５．５μｍ波段范围的光电子器件．在光通讯方面，需要２．５５μｍ波长的激光器和接收器，ＧａＩｎＳｂ半导体合金无疑是一种可选的材料．此外，这种材料也可用于制作高速电子器件，与ＧａＡｓ基异质结构相比，Ｇａ...

GaInSb/GaSb quantum wells have been grown by MOCVD technique and the photoluminescence (PL) measurement was performed at 4K. The effects of GaSb capping layer thickness, GaInSb well width and indium content in well on the PL spectra were investigated in detail. It was found that the carrier concentration increased with decreasing the thickness of the capping layer. The FWHM of photoluminescence spectra broaden as the In content in well increased because more clusters should exist in the alloys with high In content and consequently result in the degeneration of the optical quality.