纳米尺度栅线结构的线边缘粗糙度分析和表征

Analysis and Characterization of Line Edge Roughness of Nanostructures

为了对线边缘粗糙度（LER）和线宽粗糙度（LWR）进行分析和表征，采用电子束光刻工艺和感应耦合等离子体刻蚀工艺制备了两种纳米尺度栅线结构，用扫描电子显微镜（SEM）对所制备结构进行了检测和定性分析。基于离线SEM图像分析法提取了纳米栅线结构的线边缘轮廓。将所提取的线边缘轮廓视为随机信号，分别采用均方根偏差σ、偏斜度Sk、峭度Ku、高高相关函数和功率谱密度函数表征了LER／LWR的幅度特征、形状特征和空间特征，研究了LER／LWR各参数从光刻图形到刻蚀图形的变化，实现了LER／LWR的定量分析和表征。

For characterizing line edge roughness （LER） and line width roughness （LWR）, two kinds of nanostructures were fabricated with electron beam lithography process and inductively coupled plasma etching process. The fabricated nanostructures were measured and analyzed with scanning electron microscopy （SEM） , and their line edges were extracted by mean of an off-line SEM image analysis algorithm. Based on random process theory, root mean square deviation σ, skewness （Sk）, kurtosis（Ku）, height-height correlation function and power spectral density function were employed to characterize the amplitude features, shape features and spatial characteristics of LER/LWR respectively. The transfer of LER/LWR of the resist lines into the silicon lines were investigated, and quantitative analysis and characterization of LER/ LWR were realized.