摘要
设计并利用分子束外延生长了GaAs／AlGaAs异质结结构，以制作应用于中国电阻基准的量子化霍尔电阻器件。报道了这种制作量子化霍尔电阻器件的步骤及结果，讨论了利用77K下二维电子气的载流子浓度和迁移率数据初步判断其是否适合用于量子化霍尔电阻标准的方法和该方法的局限性。
In order to fabricate quantum Hall devices for resistance metrology application, GaAs - AlGaAs heterostructures with two dimensional electron gases （2DEG） are specially designed and grown by Molecular Beam Epitaxy （MBE） system. Device fabrication process and measurement results are described. A preliminary criteria for selecting an appropriate sample by its carrier concentration and mobility under 77 K is given, the limitation of this criteria is also discussed.
出处
《计量学报》
CSCD
北大核心
2010年第6期543-546,共4页
Acta Metrologica Sinica
