砷化镓石墨点阵柱状光子晶体传感器的应力特性

Stress Characteristic of Photonic Crystals Sensor Made by GaAs Pillars in Air with Graphite Lattice

利用时域有限差分（FDTD）程序计算了二维砷化镓石墨点阵柱状光子晶体的能带。结果表明,这种二维石墨点阵柱状光子晶体在0.53-0.58的归一化频率区间有一个完全光子带隙。基于此,构造了一种二维砷化镓石墨点阵柱状光子晶体应力传感器的模型,利用FDTD方法,计算了传感器共振腔TEy模的共振峰波长沿x轴方向和y轴方向应力变化的情况,以及共振峰波长随应力环境变化的情况。计算结果表明,传感器共振峰波长随应力环境变化具有很好的线性特性,其应力响应灵敏度为0.0111 nm/MPa;这种石墨点阵柱状光子晶体传感器沿x轴方向和y轴方向的应力响应灵敏度相同。

The photonic energy bands of the two-dimensional photonic crystal made by GaAs pillars in air with graphite lattice is calculated by finite difference time domain（FDTD） method.The result shows that there is a complete photonic band gap in the normalized frequency zone between 0.53 to 0.58 within this kind of photonic crystal.Based on it,a model of two-dimensional photonic crystals stress sensor made by GaAs pillars in air with graphite lattice is designed.The TEy mode formant wavelength of the sensor resonant cavity changing along with x and y directions stress and the stress environment are calculated by FDTD method.The result shows that there is a good linear characteristic between the formant wavelength and the stress,the sensor sensitivity responding to stress is 0.0111 nm/MPa,meanwhile,it is found that the sensor sensitivities along x and y directions are the same.