磁控溅射沉积薄膜实验参数优化光谱诊断

Spectrum Diagnostics for Optimization of Experimental Parameters in Thin Films Deposited by Magnetron Sputtering

采用磁控溅射仪、Omni-λ300系列光栅光谱仪、CCD数据采集系统和光纤导光系统等构成的等离子体光谱分析系统,采集了以Cu和Al为靶材、氩气为工作气体,射频磁控溅射法沉积硅基薄膜时的等离子体发射光谱。以CuⅠ324.754 nm,CuⅠ327.396 nm,CuⅠ333.784 nm,CuⅠ353.039 nm,AlⅠ394.403 nm和AlⅠ396.153 nm为分析线,研究了Cu和Al等离子体发射光谱强度随溅射时间、溅射功率、靶基距和气体压强等实验参数的变化。并与射频磁控溅射沉积薄膜实验参数的选择进行对比,表明发射光谱法对射频磁控溅射薄膜生长条件的优化有着很好的指导作用。

The plasma emission spectra generated during the deposition process of Si-based thin films by radio frequency（RF） magnetron sputtering using Cu and Al targets in an argon atmosphere were acquired by the plasma analysis system,which consists of a magnetron sputtering apparatus,an Omni-λ300 series grating spectrometer,a CCD data acquisition system and an optical fiber transmission system.The variation in Cu and Al plasma emission spectra intensity depending on sputtering conditions,such as sputtering time,sputtering power,the target-to-substrate distance and deposition pressure,was studied by using the analysis lines CuⅠ324.754 nm,CuⅠ327.396 nm,CuⅠ333.784 nm,CuⅠ353.039 nm,AlⅠ394.403 nm and AlⅠ396.153 nm.Compared with the option of experimental parameters of thin films deposited by RF magnetron sputtering,it was shown that emission spectra analysis methods play a guiding role in optimizing the deposition conditions of thin films in RF magnetron sputtering.