摘要
用高ＴＣＧｄＢａ２Ｃｕ３Ｏ７－δ薄膜研制了面微桥型２×４阵列式Ｂｏｌｏｍｅｔｅｒ芯片。实验发现，当减少高ＴＣＧｄＢａ２Ｃｕ３Ｏ７－δ薄膜的厚度时，这种芯片上的微桥呈现出与双晶晶界型微桥异常相似的Ⅰ－Ⅴ特性。
The 2×4 arrays with GdBa 2Cu
3O 7-δ thin film were fabricated. The experimental results show that when decrease the depth
of the high T C GdBa 2Cu 3O 7-δ film, the Ⅰ-Ⅴ characteristic of the microbridge on this kind
of 2×4 arrays is almost the same as the Ⅰ-Ⅴ characterstic of GBJ.
出处
《低温与超导》
CAS
CSCD
北大核心
1999年第2期29-31,共3页
Cryogenics and Superconductivity
