国产工艺的部分耗尽SOI PMOSFET总剂量辐照及退火效应研究

Total Dose Irradiation and Annealing Effects of Domestic Partially-Depleted SOI PMOSFET

对国产工艺的部分耗尽SOIPMOSFET60Coγ射线的总剂量辐照及退火效应进行了研究。结果表明:随着工艺技术的发展,正栅氧化层具有较强的抗辐照加固能力,背栅由于埋氧层厚度和工艺生长原因而对总剂量辐照较为敏感;辐照引入的深能级界面态陷阱电荷的散射作用,导致了正栅源漏饱和电流的显著降低;退火过程中界面态陷阱电荷的饱和决定了正栅亚阈曲线的平衡位置,而隧穿或热发射的电子只能中和部分背栅氧化物陷阱电荷,使得退火后背栅曲线仍与初始值有一定负向距离。

Total dose irradiation and annealing effects of domestic partially-depleted SOI PMOSFET were studied.It is found that the back gate is more sensitive to total dose irradiation.It is the deep level interface traps that mainly decrease the saturated cur-rent.During annealing,it is the interface traps that determine the balance position of the top gate sub-threshold curve.While the tunneling and thermal emission electrons can only neutralize parts of the oxide traps in the buried oxide,making the back gate sub-threshold curve negatively away from the original one after a long time annealing.