ns激光辐照硅光电探测器的损伤阈值

Damage threshold of Si photoelectric detector irradiated by ns laser

以He-Ne激光作为参考光,采用反射光能量法,测量了ns激光辐照硅光电探测器的损伤阈值,并测量了不同功率密度的强激光辐照下探测器对参考光的反射率.实验结果表明,ns激光辐照硅光电探测器的损伤阈值为4.1×106W/cm2,在探测器被强激光损伤的初期阶段,探测器对参考光的反射率下降很快,继续增加入射激光的能量,探测器对参考光的反射率下降趋于平缓.

According to the energy of the reflected beam,damage threshold of photoelectric detector under laser irradiation is measured.After irradiation of different power densities of He-Ne lasers,the reflectivity of the detector is measured.The experimental results indicate that ns laser damage threshold of photoelectric detector is 4.1×10^6 W/cm^2.In the first damage period,the reflectivity of the detector decreases rapidly,further increasing of the incident laser power intensity reduces the reflectivity of the detector smoothly.