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A Generalized Reverse I-V Plot for Schottky Contacts

A Generalized Reverse I-V Plot for Schottky Contacts
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出处 《材料科学与工程(中英文版)》 2010年第12期97-100,共4页 Journal of Materials Science and Engineering
关键词 肖特基接触 反向偏置 广义逆 电流电压 电子领域 串联电阻 理想因子 接触测量 Reverse I-V plot, schottky contacts, barrier height, series resistance, ideality factor.
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参考文献10

  • 1H. Norde, A modified forward I-V plot for schottky diodes with high series resistance, J. Appl. Phys. 50 (1979) 5052-5053.
  • 2K.E. Bohlin, Generalized norde plot including determination of the ideality factor, J. Appl. Phys. 60 (1986) 1223-1224.
  • 3K. Sato, Y. Yasumura, Study of the forward I-V plot for schottky diodes with high series resistance, J. Appl. Phys. 58 (1985) 3655-3657.
  • 4A.B. McLean, Semicond, imitations to the norde I-V plot, Sci. Technol. I (1986) 177-179.
  • 5S.K. Cheung, N.W. Cheung, Extraction of schottky diode parameters form forward current-voltage characteristics, Appl. Phys. Lett. 49 (1986) 85-87.
  • 6G.S. Chilana, R.S. Gupta, A modified norde function for the measurement of the series resistance and the voltage-dependent barrier height of triangular barrier diodes, J. Appl. Phys. 65 (1989) 2859-2863.
  • 7M. Lyakas, R. Zaharia, M. Eizenberg, Analysis of nonideal Schottky and p-n junction diodes-Extraction of parameters from I-V plots, J. Appl. Phys. 78 (1995) 5481-5489.
  • 8S.M. Sze, D.J. Coleman, J.A. Loya, Current transport in metal-semiconductor-metal (MSM) structures, Solid-State Electronics 14 (1971) 1209-1218.
  • 9E.H. Rhoderick, R.H. Williams, Metal- Semiconductor Contacts, Oxford Science Publications, 1988.
  • 10H. Jiang, N. Nakata, G.Y. Zhao, H. lshikawa, C.L. Shao, Jpn, Back-illuminated GaN metal-semiconductor- metal UV photodetector with high internal gain, J. Appl. Phys. 40 (2001) 505-507.

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