合成参数对气-液-固法低温生长MgO纳米线的影响

Effects of synthesis parameters on the growth of magnesium oxide nanowries by vapor-liquid-solid mechanism at low temperatures

将Mg(C11H19O2)2(即双(2,2,6,6,-四甲基-3,5-庚二酮酸)镁)作为反应前驱体,用脉冲液滴注入式金属有机物化学气相沉积法,在较低温度(T=600℃)下合成MgO纳米线.纳米线沿着[001]方向生长且Au催化剂位于纳米线顶端,这表明纳米线是由气-液-固机制诱导生长的.通过改变前驱体注入的脉冲周期或周期注入剂量能够控制纳米线的生长模式,使之垂直或平行于样品表面生长.

MgO nanowires are synthesized at a lower temperature（T = 600 ℃） by pulsed liquid injection metal-organic chemical vapor deposition with Mg（C11 H19 O2）2（magnesium bis（2,2,6,6-tetramethyl-3,5-heptanedionate）） as precursor.The MgO nanowires grow along the [001]direction with gold nanoparticles on the tips,which leads to the vapor-liquid-solid growth mechanism.The growth mode of nanowires（vertical growth to the substrate or parallel growth to the substrate） can be controlled by adjusting the injection period or the injection mass /period.