选择区掺杂方法研究

Research on Method of Selective Region Doping

针对低成本、易操作和安全无污染的半导体掺杂要求提出了一种选择区扩散掺杂方法。利用电子束曝光光刻开窗,采用改进的二氧化硅乳胶涂覆扩散法进行扩散掺杂。实验证明调整个别工艺步骤后该方法无杂质遮蔽层的设计可应用于晶体硅太阳能电池欧姆接触的制作,且无遮蔽层时扩散炉内的气体流量和组份对方块电阻有较大的影响,适当增大气体流量可以降低非掺杂区的杂质表面浓度,引入遮蔽层后也能够较好地满足目前集成光路中涉及的某些杂质掺杂要求。

A doping method of selective region was proposed with consideration of the semiconductor doping requirements of low cost, repeatability, safety and less pollution. Doping windows were etched with the use of Electron Beam Exposure System. Modified diffusion method using emulsion of SiO2 was chosen to realized impurity doping. It has been proven that this sort of method with some change made can be use for the Ohmic contact fabrication of silicon solar cells as no mask was applied. Besides, the flux and components of gas flow played a relatively great role in square resistance of doping area, appropriate increment of gas flux could reduce impurity＇s surface concentration. It could meet the requirements of some impurity doping related to Integrated Optical Circuit with mask layer being introduced.