期刊文献+

一种应用于TCXO的带隙基准源设计

Design of a Bandgap Reference Used in TCXO
下载PDF
导出
摘要 采用CSMC 0.35μm混合工艺设计了一种应用于温度补偿晶体振荡器(TCXO)的低功耗带隙基准电压源和电压转换电路.可提供可调的多种参考电压,同时设计了启动与逻辑控制电路,确保基准电路能正常工作并降低功耗.Cadence Spectre仿真结果显示,采用3 V的电源电压,在-40℃~85℃范围内温度系数为14.5 ppm/℃,电源电压大于2.2 V即可正常启动,在正常工作情况下,基准功耗小于10μW,低频电源抑制比为83.2 dB. A low power CMOS bandgap voltage reference circuit used in the temperature compensated crystal oscillator(TCXO) has been designed using CSMC 0.35 μm mixed process.The voltage transform circuit at the output stage is used as a buffer to provide various tunable reference voltages.The start-up circuit and the logic control circuit have also been designed,ensuring the proper function and power reduction of the reference circuit.Simulation results using Cadence Spectre indicate that at a supply voltage of 3 V,the average measured temperature coefficient is 14.5 ppm/℃ in the temperature range of-40℃ to 85℃.The circuit can be started up at a supply voltage greater than 2.2 V.Under normal working conditions,the power dissipation is less than 10 μW and the power supply rejection ratio is about 83.2 dB.
出处 《微电子学与计算机》 CSCD 北大核心 2010年第12期90-93,共4页 Microelectronics & Computer
基金 教育部留学回国人员科研启动基金(教外司留[2008]890) 教育部新世纪优秀人才支持计划(NCET-06-0484)
关键词 温度补偿晶体振荡器 带隙基准 低功耗 仿真 温度系数 TCXO bandgap reference low power simulation temperature coefficient
  • 相关文献

参考文献3

二级参考文献18

  • 1谢毅,朱云涛,邵丙铣.一种低电压的CMOS带隙基准源[J].微电子学与计算机,2005,22(5):110-113. 被引量:12
  • 2黄裕泉,李斌,郑曰.1.5V工作电压带隙基准电路的设计[J].微电子学与计算机,2007,24(3):95-98. 被引量:4
  • 3Paul R Gray,Paul J Hurst,Stephen H Lewis,et al.模拟集成电路的分析与设计[M].北京:高等教育出版社,2003.
  • 4Paul r Gray,Paul J Hurst,Stephen H Lewis,et al.Analysis and design of analog integrated circuits[M].Fourth edition,john wiley &sons,inc.2001,317~323
  • 5Gerard C M.Meijer,Peter C Schmale,Klaas van zalinge.A new curvature corrected bandgap reference.IEEE Journal of Solid State Circuits[J],Dec.1982,17 (6):1139~1143
  • 6Made Gunawan,Gerard C M.Meijer,Jeron Fonderie,et al.A curvature corrected low voltage bandgap reference,ieee journal of solid-state circuits[J].June 1993,28(6):667~670
  • 7Behzard Razavi.模拟CMOS集成电路设计[M].西安:西安交通大学出版社,2003.
  • 8Song B S, Gray P R. A precision curvature -compensated CMO6 bandgap reference [ J ]. IEEE Journal of Solid-state Circuits, 1983,18(6) :634-643.
  • 9Lee I, Kim G. Exponential curvature-compensated BiCMOS bandgap reference [ J ]. IEEE Journal of Solid-state Circuits. 1994,29:1396-1403.
  • 10Malcovati P. Temperature protection methods in the solidstate eireuit[J ]. 1996,13 : 1256-1302.

共引文献18

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部