摘要
在分析了带隙基准的指数曲率补偿原理的基础上,设计了一个低功耗、低温度系数、高电源抑制比的新型BICMOS带隙基准源电路.该电路基于0.6μm BICMOS工艺进行设计、仿真和实现.仿真结果表明,该带隙基准源在5V电源电压下,电源电流为50μA;温度变化范围从-40℃~110℃时,温度系数为2ppm/℃;低频电源抑制比为-105dB;负载从空载到驱动1k电阻时调整率为0.6mV.
A novel exponential curvature-compensated BICMOS（Bipolar Complementary Metel-Oxide-Semiconductor） bandgap reference is proposed;which has a character of low power,low temperature coefficient,high power supply rejection ratio（PSRR）;basing on analysis of exponential curvature-compensation bandgap reference technique.The reference circuit is designed,simulated and realized by 0.6μm BICMOS process.The simulation results show that the reference has a 50μA supply current;and temperature coefficient（TC） of 2ppm/℃ from-40℃ to 110℃;and-105dB PSSR at low frequency;and 0.6mV load regulation.
出处
《微电子学与计算机》
CSCD
北大核心
2010年第12期109-112,共4页
Microelectronics & Computer
关键词
BICMOS
带隙基准源
指数补偿
低功耗
BICMOS
bandgap reference
exponential curvature-compensated
low power
