期刊文献+

应用于双频GPS接收机的CMOS低噪声放大器设计 被引量:2

Design of CMOS LNA in Dual-Band GPS Receiver
下载PDF
导出
摘要 结合双频GPS接收机的主要性能,提出了第一级低噪声放大器实现方案和电路实现方式.通过对影响单端LNA性能主要因素的分析,在电路结构和封装打线方式上进行改进,实现了低噪声系数高转换增益的单端LNA,从而提高了接收机灵敏度和噪声性能. With consideration of the crucial performances of dual-band GPS receivers,both system-level scheme and circuit-level implementation of the first stage LNAs are proposed.Through analysis of parameters influencing parameters of single-ended LNA,improvements in packaging and topology are presented to achieve low noise figure and high conversion gain,therefore,sensitivity and noise performance of the receiver are improved.
出处 《微电子学与计算机》 CSCD 北大核心 2010年第12期153-156,共4页 Microelectronics & Computer
基金 国家"八六三"计划项目(2007AA12Z344)
关键词 双频接收机 灵敏度 单端LNA 噪声系数 dual-band receiver sensitivity single-ended LNA noise figure
  • 相关文献

参考文献2

二级参考文献14

  • 1黄煜梅,叶菁华,朱臻,洪志良.2.4GHz、增益可控的CMOS低噪声放大器[J].固体电子学研究与进展,2004,24(4):498-504. 被引量:4
  • 2张佑生,刘晓平,王仲宾.s参数及其在微波电路CAD中的应用[J].微电子学与计算机,1993,10(1):9-12. 被引量:1
  • 3王良江,冯全源.1.8GHzCMOS有源负载低噪声放大器[J].电子器件,2005,28(3):494-496. 被引量:4
  • 4Chiu Hung-Wei,Lu Shey-Shi,Lin Yong-sheng.A 2.17-db nf 5-ghz-band monolithic CMOS INA with 10-mW DC power consumption[J].IEEE Transactions on Microwave Theory and Techniques,2005,53(3)
  • 5Thomas H Lee.The design of CMOS radio frequency integrated circuits.Cambridge University Press,2004
  • 6Egels M,Gauben J,Pannier P,et al.Design method for fully integrated CMOS RF LNA[J].Electronics Letters,2004,40(24):1513~1514
  • 7Kim C W,Kang M S,Anh P T,et al.An ultra wideband CMOS low noise amplifier for 3-5GHz UWB system[J].IEEE Journal of Solid-state Circuits,2005,40(2):544-547.
  • 8Kim C W,Jung M S,Lee S G.Ultra-wideband CMOS low noise amplifier[J].Electronics Letters,2005,41(7):384-385.
  • 9Liscidini A,Brandolini M,Sanzogni D,et al.A 0.13ìm CMOS front-end.for DCS1800/UMTS/802.11b-g with multiband positive feedback low-noise amplifier[J].IEEE Journalof Solid-State Circuits,2006,41(4):981-989.
  • 10Moreira C P,Kerheve E,Jarry P,et al.A concurrent fully-integrated BiFET LNA for W-CDMA/IEEE 802.11aapplications[EB/OL].[2006-07-14].http://ieeexplore.ieee.org/iel5/4100194/4100195/04100199.pdf.

共引文献5

同被引文献22

  • 1杨国敏,肖高标.射频低噪声放大器电路结构设计[J].电子测量技术,2006,29(1):1-2. 被引量:17
  • 2王志功 陶蕤.我国第一块工作频率高于2GHz CMOS射频集成电路研制成功[J].高技术通信,2000,10(9):110-110.
  • 3殷蔚.0.65V 3mW CMOS低噪声放大器设计[J].现代电子技术,2007,30(15):104-106. 被引量:1
  • 4Hazavi B. Design of Analog CMOS Integrated Circuits [ M].New York : McGraw-Hill ,2001.
  • 5Gil I, Cairo I, Sieiro J J. Low - power single - to - differential LNA at S-band based on optimized transformer topology and integrated ESD [ J]. IET journals on Electronics Letters ,2008, 44(3):198-199.
  • 6Choi J,Im D,Lee K. A Self-tuned Balun-LNA with Differential Imbalance Correction and Blocker Filtering [ J]. Microwave and Wireless Components Letters,IEEE,2011,21 (12): 673-675.
  • 7Lai Dengjun,Chen Yingmei,Wang Xiaodong,et al. A CMOS Single-differential LNA and current bleeding CMOS mixer for GPS receivers [ C]./IEEE Conferences on Communication Technology (ICCT). [s. I.].IEEE,2010:677-680.
  • 8Razavi B. RF Micorelectronics[ M].北京:清华大学出版社, 2003.
  • 9Deen M J,Chen C H,Cheng Y. MOSFET Modeling for Low Noise,RF Circuit Design[ C]./ IEEE CICC 2002. [ s. I.]. [s. n.].2002.
  • 10Enz C,Cheng Y. MOS Transistor Modeling for RF IC Design [J]. IEEE Transactions on Solid-state Circuits,2000,35(2): 186-201.

引证文献2

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部