室温InAsSb长波红外探测器的研制

Fabrication of room-temperature InAsSb infrared detector with long-wavelength

用熔体外延法(ME)生长出厚度达到100μm的InAsSb外延层,截止波长进入8～12μm波段。测量结果表明,InAsSb材料具有良好的单晶取向和结晶质量,位错密度达到104cm-2量级。室温下,霍尔测量得到的载流子浓度为1～3×1016cm-3,电子迁移率大于5×104cm2/Vs。用此材料制得了2～9μm波段的高灵敏度In-AsSb室温红外探测器。该探测器为浸没型光导元件,安装了镀有SiO或ZnS增透膜的单晶Si光学透镜。在黑体温度为500K、黑体调制频率为800 Hz和外加偏置电流为10 mA的测试条件下,测得293K下该探测器的最高黑体响应度达到168V/W,黑体探测率为2～6×108cm·Hz1/2·W-1,峰值探测率大于1×109cm·Hz1/2·W-1。

InAsSb epilayers with the thickness of 100 μm are grown by the melt epitaxy（ME）.The cutoff wavelengths of the materials enter the 8-12 μm range.The measurement results demonstrate that InAsSb epilayers have good single crystal orientation and crystalline quality,and the dislocation densities reach the order of 104 cm-2.Van der Pauw measurements show that the room temperature electron mobilities of InAsSb epilayers are higher than 5×104 cm2/Vs with carrier densities of 1～3×1016 cm-3.High-sensitivity room-temperature InAsSb detectors with a response wavelength range of 2-9 μm are fabricated based on this material.The detectors are immersion photoconductors.The Si optical lenses are set on the detectors,and the SiO or ZnS anti-reflective coatings are deposited on the lenses.The performance of InAsSb photoconductors is measured by a standard blackbody source with a temperature of 500 K and modulating frequency of 800 Hz under the bias current of 10 mA.At 293 K,the highest blackbody responsivity is 168 V/W,the blackbody detectivities reach（2-6）×108 cm·Hz1/2·W-1,and the peak detectivities are higher than 1×109 cm·Hz1/2·W-1.The performances of the detectors have already achieved the application level,indicating the potential applications for infrared systems and infrared imaging at room temperature.