摘要
利用磁控溅射法在玻璃衬底上制备了银掺杂ZnO薄膜,通过改变制备条件生长了一系列样品,样品退火后呈现p型导电特性。测量了样品的结构特性、光学性质和电学性质,实验表明薄膜厚度与淀积时间、溅射功率分别呈近似线性关系;薄膜晶体质量随溅射功率、背景气压的增加而降低;退火过程是银元素形成受主的重要环节,且退火能有效提高薄膜晶体质量,改善薄膜的光学性质和电学性质。分析了这些影响的机理和来源。
ZnO ： Ag films are fabricated on glass substrates by magnetron sputtering. The samples are converted to p-type after annealing. The structural, optical and electrical properties of samples are measured. The results show that the properties of films are influenced by the sputtering power, working gas pressure, partial pressure of O2 and annealing process. The formation of Ag acceptor is influenrcd by annealing conditions. Furthermore, annealing effectively improved the film quality of ZnO ： Ag. The relative mechanisms are discussed.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2010年第24期13-16,共4页
Materials Reports
基金
国家自然科学基金(20903016)
关键词
溅射
银掺杂
P型ZNO薄膜
光电性能
sputtering, Ag doping, p-type ZnO film, optical and electrical properties
