A位掺杂Bi_4Ti_3O_(12)薄膜的制备及铁电性能研究

PREPARATION AND RESEARCH OF FERROELECTRIC PROPERTY OF THE THIN FILMS OF A-SITE SUBSTITUTION OF Bi_4Ti_3O_(12)

采用溶胶-凝胶法制A位掺杂Bi4Ti3O12(BTO)的铁电薄膜Bi3.25La0.75Ti3O12(BLT)、Bi3.15Nd0.85Ti3O12(BNT)及Bi3.15(La0.5Nd0.5)0.85Ti3O12(BLNT);XRD结果表明制备的薄膜具有(117)和(00l)的混合取向;在10V电压下,BLT、BLNT和BNT薄膜的Pr分别为13.14μC/cm2、20.65μC/cm2和21.23μC/cm2;FE-SEM显示BNT薄膜表面光滑致密,颗粒均匀,薄膜厚度约为300nm。

Ferroelectric thin films Bi3.25La0.75Ti3O12（BLT）、Bi3.15Nd0.85Ti3O12（BNT） and Bi3.15（La0.5Nd0.5）0.85Ti3O12（BLNT） of A-site substitution of Bi4Ti3O12 was fabricated by sol-gel method in the paper. X-ray diffraction pattern showed the prepared thin films exhibited a highly random orientation with predominantly （117） and （001） orientation. The PBrB value of BLT, BLNT and BNT were respectively 13.14μC/cm^2, 20.65μC/cm^2 and 21.23μC/cm^2 at the voltage of 10V. FE-SEM showed that the BNT thin film had a dense and homogeneous microstructure without any crack. The BNT thin film thickness is about 300nm.