摘要
研究了原材料、液相添加剂ＢＮ对Ｙ３＋掺杂的（Ｓｒ０．４Ｐｂ０．６）ＴｉＯ３Ｖ形ＰＴＣＲ陶瓷半导化和显微结构的影响。结果表明，添加剂ＢＮ能促进晶粒生长、改善显微结构、显著降低室温电阻率ρ２５和烧结温度。用常规的制备方法制得居里温度ＴＣ≈２１０℃、ρ２５≤５．０×１０３Ω·ｃｍ、电阻温度系数α４０≈１３％℃－１、电阻率ρ突变比ρｍａｘ／ρｍｉｎ＞５．０×１０３的Ｖ形ＰＴＣＲ陶瓷材料。
The effect of raw materials and liquid phase additives BN on the
semiconducting state and the microstructure of V type PTCR (Sr 0 4 Pb 0 6 )TiO 3
ceramics doped with Y 3+ is studied The results show that additives BN can promote the
growth of grain, improve the microstructure, obviously reduce the room temperature resistivity
and the sintering temperature of ceramics by conventional preparation processes, the V type
PTCR ceramics is made with Curie temperature T C≈210℃, room temperature resistivity
ρ 25 ≤5 0×10 3Ω·cm, temperature coefficient of resistivity α 40 ≈13%/℃,
resistivity jump ρ max / ρ min >5 0×10 3 (8 refs )
出处
《电子元件与材料》
CAS
CSCD
1999年第2期21-23,共3页
Electronic Components And Materials
