基于SOI技术的MEMS超声分离器制备方法研究

Research on the Fabrication of MEMS Ultrasonic Separators Based on SOI Materials

基于简正模式的MEMS超声分离器对分离腔的侧壁垂直度、深度均匀性以及表面平整度等要求较高,结合IC工艺重点探讨、研究了超声分离器腔体制作方法。提出将SOI(silicon on insulator)片作为刻蚀基底,采用等离子体干法刻蚀、硅/玻璃键合以及激光热加工等技术制备分离器,成功制备出腔体深度分别为137μm和200μm的分离器,腔体深度误差均在±2μm以内,腔体表面粗糙度Ra<10 nm,腔体侧壁垂直度达83°。为MEMS超声分离器的制备提供了一种简便、高效的工艺方法。

There are special requirements on the verticality of the sidewall,uniformity of the depth,smoothness of the surface and so on for the cavity of MEMS ultrasonic separators,which are based on normal vibration modes.The fabrication of the cavity based on the IC process was investigated.The SOI was proposed to be used as the etchirg substrate.The plasma etching,silicon/glass bonding and laser drilling were employed to form the separator.Separators with depths of 137 μm and 200 μm were manufactured.The depth error of the cavity is in the range of ±2 μm and the roughness of the inner surfaces is Ra10 nm,the verticality of the sidewall of the cavity reaches 83°.A simple and effective method to manufacture the ultrasonic separator was presented.