摘要
将磁控管方式溅射用于微波ECR等离子体沉积技术。在低气压和低温下沉积了高度C轴取向的ZnO薄膜,其膜的沉积速率比普通ECR溅射中所得到的速率大得多,并且在Φ12cm的膜区域内显示出良好的均匀性。
Magnetron mode sputtering was applied to an electron cyclotron resonance (ECR) plasma deposition technique,ZnO film with an excellent crystal orientation was deposited at low temperatures and low gas pressures,with much higher rates than those obtained in conventional ECR reactive sputtering and good uniformity of deposition film in Φ 12cm.
出处
《半导体技术》
CAS
CSCD
北大核心
1999年第2期16-19,共4页
Semiconductor Technology
基金
国家自然科学基金