摘要
目前看来,193nm与x射线光刻技术都很有希望应用到0.13μm及0.13μm以下的集成电路工业中去,而掩模制作对这两种光刻技术而言是非常重要的。本文对193nm光学掩模与x射线掩模制造技术进行了对比分析。
At present,both 193nm optical and x ray lithography are main candidates for the manufacture of 0 13μm integrated circuits and below.The fabrication of mask is very important to these two lithography methods.In this paper,the fabrication technology of both 193nm optical reticle and x ray mask is compared.
出处
《半导体情报》
1999年第2期39-42,共4页
Semiconductor Information
关键词
光学掩模
X射线掩模
电子束光刻
IC
Photomask X ray mask Optical proximity correction E beam lithography