期刊文献+

高平坦度大功率连续可变衰减器 被引量:1

High Power and Good Attenuation Flatness Continuously Variable Attenuator
下载PDF
导出
摘要 介绍了一种连续可变衰减器,采用带状线传输线结构,以导热性能优异的氧化铍陶瓷为基材,提高传热效率,增大产品的功率容量。在氧化铍陶瓷上加载厚膜电阻,利用厚膜电阻对电场的极化吸收实现对微波能量的衰减,通过改变厚膜电阻相对于中心导体的位置来实现衰减量的连续可变。利用厚膜电阻优异的衰减量平坦度特性来实现产品的高平坦度要求。利用HFSS有限元分析软件辅助设计,提高工作效率,降低调试难度。产品外形尺寸:120mm×100mm×70mm,产品实测性能:在1.2~1.4GHz范围内,插入损耗≤0.4dB,电压驻波比≤1.45,衰减量:0.4~7dB,衰减量平坦度:±0.1dB(≤4dB)、±0.2dB(≤7dB),功率容量:200W(平均功率)。产品实测性能与HFSS软件的仿真结果基本吻合。 This article mainly introduces a type of stripline continuously variable attenuator using BeO ceramics as its base material.The BeO ceramics has good thermal conductivity,thus the power capacity of the attenuator is enhanced.By loading thick-film resistor on the BeO ceramics,the attenuation of microwave power is realized through polarization absorption of thick-film resistor to electric field.By changing the position of thick-film resistor relative to centre conductor continuous variability of attenuation can be achieved.Excellent attenuation flatness of thick-film resistor can meet the requirements of high attenuation flatness of the device.HFSS finite element analysis software was used to improve the design efficiency and reduce the tuning difficulties.Attenuator with dimension of 120mm×100mm×70mm was designed,featuring insertion insert loss: ≤0.4dB,VSWR: ≤1.45,attenuation:0.4-7dB,attenuation flatness: ±0.1dB(attenuation≤4dB) and ±0.2dB(attenuation≤7dB),power capacity: 200W(average) in frequency range of 1.2-1.4GHz..The test performance results are in accordance with the HFSS simulations.
出处 《磁性材料及器件》 CSCD 北大核心 2010年第6期48-51,共4页 Journal of Magnetic Materials and Devices
关键词 连续可变衰减器 设计 极化吸收 衰减平坦度 continuously variable attenuator design polarization absorption attenuation flatness
  • 相关文献

参考文献4

  • 1Attenuators. http://www.nardamicrowave.com/east/User Files/atten_notes.pdf.
  • 2Cristal E G Continuously variable coaxial-line attenuator [A]. Microwave Symposium Digest[C]. IEEE MTT-S International: Orlando, FL, USA :1979, 422-424.
  • 3廖承恩.微波技术基础[M].西安:西安电子科技大学出版社,2001.
  • 4JR威尔特.动量、质量、热量传递原理[M].北京:国防工业出版社,1984.306-310.

共引文献5

同被引文献17

  • 1郑晓虎,刘芳华,王明娣.一种新型梳齿驱动式微镜[J].传感器技术,2005,24(3):78-79. 被引量:1
  • 2贺月娇,方青,辛红丽,陈鹏,李芳,刘育梁.低功率消耗、响应快速的SOI基可变光学衰减器[J].光电子.激光,2005,16(6):642-645. 被引量:2
  • 3魏会敏,罗风光,曹明翠,胡巧燕.基于低电压驱动MEMS的可调光衰减器的设计与性能分析[J].光电子.激光,2006,17(6):685-687. 被引量:13
  • 4万鹏,袁野,吴兴坤.超小型非硅基微机械可调光衰减器[J].光子学报,2006,35(10):1505-1508. 被引量:3
  • 5J. Tao,X. G. Huang,J. H. Chen,J. H. Zhu."All-optical broadband variable optical attenuators and switches in plasmonic teeth waveguides,"[].Optics Communication.2010
  • 6Cao Zhonghui,Yuan Ye,Bao Junfeng,et al.A Micromechanical Variable Optical Attenuator based on EDM micromachining[].Proceedings of SPIE the International Society for Optical Engineering.2002
  • 7S.-S.Yun,Y.-Y.Kim,H.-N.Kown,W.-H.Kim,J.-H.Lee,Y.-G.Lee,S.-C.Jung."Optical characteristics of a micromachined VOA Using successive partial transmission in a silicon optical leaker"[].IEEE/LEOS IntConf Optical MEMS.
  • 8Lee,J-H,Ko,Y-C,Jeong,H-M,Choi,B-S,Kim,J-M,Duk,YJ.SOI-based fabrication processes of the scanning mirror having vertical comb fingers[].Sensors and Actuators A Physical.2002
  • 9Isamoto,K,Kato,K,Morosawa,K,Chong,H,Fujita,H,Toshiyoshi,H.A 5-Voperated MEMS variable optical attenuator by SOI bulk micromachining[].IEEE J Sel Top Quantum Elect.2004
  • 10Marxer C,Jong B D,Rooij N D.Comparison of MEMSvariable optical attenuator designs[].IEEE/IEOS IntConf Optical MEMS.2002

引证文献1

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部