摘要
本文基于差值取样谱定理,提出一种用于同时确定少子寿命及表面产生速度的新方法———瞬态电容弛豫谱方法,该方法利用谱的峰值位置和高度能同时、准确、唯一地得到少子寿命及表面产生速度.同时将该方法与Zerbst方法得到的结果进行了对比.
A new method to determine the minority carrier lifetime and the surface generation velocity simultaneously,called transient capacitance relaxation spectral analysis method,is proposed in this paper.Using this method,the minority carrier lifetime and the surface generation velocity can be obtained simultaneously,accurately and solely from the position and the height of the spectral peak.Meanwhile we compare the results from this method with those from Zerbst method.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1999年第5期8-10,共3页
Acta Electronica Sinica
关键词
少子寿命
瞬态电容
驰豫谱
半导体器件
设计
Minority carrier lifetime,Surface generation velocity,Transient capacitance,Relaxation spectrum