摘要
本文研究了在Ｓｉ的图形衬底上生长应变ＳｉＧｅ／Ｓｉ超晶格的结构和其光致发光性质．图形衬底由光刻形成的类金字塔结构组成．发现在组成倒金字塔结构的（１１１）面的交界处有富Ｇｅ的ＳｉＧｅ量子线出现．对相同条件下图形衬底和平面衬底上的应变ＳｉＧｅ层的光致发光谱进行了比较，图形衬底上总的发光强度相对提高了５．２倍．认为这种提高同富Ｇｅ的ＳｉＧｅ量子线的产生相关．
Abstract Photoluminescence spectrum and
structure of strained SiGe/Si superlattices grown on Si patterned substrate are investigated.
The patterned substrate is composed of inverse pyramid like structures produced by
photolithography. SiGe quantum wires with rich Ge content are found at the crosses of two (111)
planes which are facets of inverse pyramid like structure. Comparative photoluminescence of
strained SiGe layer on patterned substrate and planar substrate under same condition are
performed. The total luminescence intensity of strained layer on patterned substrate is 5 2
times larger than on planar substrate. It is believed that this increase is related to the Ge rich
SiGe quantum wires.
