利用改进的固相外延技术改善CMOS/SOS器件的特性

Improvement of CMOS/SOS Devices Characteristics by Modified Solid Phase Epitaxy

ＣＭＯＳ／ＳＯＳ器件同体硅ＣＭＯＳ器件相比，载流子迁移率较低，沟道漏电电流较大，它们主要是由异质外延硅膜缺陷，特别是靠近硅蓝宝石界面的硅膜缺陷造成的．本文描述一种改进的固相外延技术提高外延硅膜质量进而改善ＣＭＯＳ／ＳＯＳ器件特性的实验结果．

Abstract CMOS/SOS devices have lower carrier mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly result from the defects of heteroepitaxial silicon film, especially from the defects near Si Sapphire interface. This paper describes the experiment results of CMOS/SOS devices characteristics improved by a better epitaxial silicon quality obtained by a modified solid phase epitaxy.