摘要
采用射频磁控溅射技术在不同条件、不同基片上制备氧化碲(TeOx)薄膜,并通过X线衍射、傅里叶变换红外光谱、X线光电子能谱等技术对制备的TeOx薄膜的结构和成分进行了分析。研制了TeOx/36°YX-LiTaO3结构的Love波器件,对Love波器件的延时温度系数(TCD)进行研究。结果表明,与36°YX-LiTaO3基片上制作的水平切变声波器件的延时温度系数相比,Love波器件的延时温度系数因TeOx薄膜的沉积而减小,故TeOx薄膜的延时温度系数为负值,其变化量取决于TeOx薄膜的制备条件和薄膜厚度。因此,TeOx/36°YX-LiTaO3结构Love波器件的延时温度系数可通过选择TeOx薄膜的制备条件和膜厚进行优化。
The tellurium oxide（TeOx） thin film was prepared on different substrate and under different deposition conditions by RF magnetron sputtering technique.The structures and composition of the TeOx films were studied by X-ray diffraction,Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy.The Love-wave devices based on TeOx/36°YX-LiTaO3 structures were fabricated,and the temperature coefficient of delay（TCD） of the devices was investigated.The results showed that TCD of the Love-wave devices was decreased since the TeOx film was deposited.The TCD of the TeOx was a negative value and it was strongly dependent upon the preparation conditions and the thickness of TeOx film.Therefore,the TCD of the Love-wave devices can be optimized by suitably selecting the preparation conditions and the thickness of TeOx films.
出处
《压电与声光》
CSCD
北大核心
2010年第6期918-921,925,共5页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目(10774074)
