摘要
用射频磁控溅射法在玻璃衬底上制备不同薄膜厚度氧化铟锡(ITO)透明导电薄膜。利用X线衍射(XRD)、透射光谱、四探针法和扫描电子显微镜(SEM)分析薄膜厚度(沉积时间)对ITO薄膜的结晶取向情况、透过率、电导率和表面形貌的影响。试验结果表明,在适当的沉积时间(5 min)下制备的ITO薄膜具有良好的光学性能和电学性能,其方阻为17Ω/□,在可见光区域内的平均透过率为84%。
Indium Tin Oxide（ITO） thin films were deposited on glass substrates with different film thickness.The influence of film thickness on the crystal structure of the films,transmittance,resistivity and surface morphology was investigated by optical transmission spectrum,four-point probe method,SEM and XRD.The experiment results showed that the films deposited in five minute had excellent electrical and optical property.The sheet resistance of ITO film was 17 Ω/□ and average transmittance of the film in visible region was 84%.
出处
《压电与声光》
CAS
CSCD
北大核心
2010年第6期1024-1026,共3页
Piezoelectrics & Acoustooptics
关键词
薄膜
氧化铟锡(ITO)
磁控溅射
薄膜厚度
thin films
indium tin oxide（ITO）
magnetron sputtering
film thickness
