溅射制作埋嵌电阻的TaN薄膜电阻率的控制

Control of electrical resistivity of TaN thin films by reactivesputtering for embedded passive resistors

文章介绍的是由射频(RF)溅射反应沉淀制备的TaN薄膜,以及在各种N2/Ar气流比例和工作压力下测试其电阻率变化。从X射线衍射(X-RD)图像和四点探针测试仪测试的TaNx薄膜方块电阻来看。研究发现,TaNx薄膜电阻率发生突变的原因主要是由于N2分压的作用而使TaNx薄膜晶体结构发生了变化。当六边形结构的TaN薄膜变成面心立方行结构时,薄膜电阻从16Ω/sq增加到1396Ω/sq。但是,在晶体结构不变和一定的工作压力范围内,我们能把TaN薄膜的电阻率控制在69Ω/sq到875Ω/sq范围内。在扫描电子显微镜(SEM)成像中,晶粒尺寸随着工作压力的增加将会有所减小。

Tantalum nitride thin films were deposited by radio frequency（RF） reactive sputtering at various N2/Ar gas flow ratios and working pressures to examine the change of their electrical resistivity.From the X-ray diffraction（XRD） and four-point probe sheet resistance measurements of the TaNx films,it was found that the change of the crystalline structures of the TaNx films as a function of the N2 partial pressure caused an abrupt change of the electrical resistivity.When the hexagonal structure TaN thin films changed to an f.c.c.structure,the sheet resistance increased from 16 Ω/sq to 1396 Ω/sq.However,we were able to control the electrical resistivity of the TaN thin film in the range from 69 Ω/sq to 875 Ω/sq,with no change in crystalline structure,within a certain range of working pressures.The size of the grains in the scanning electron microscopy（SEM） images seemed to decrease with the increase of working pressure.