掺铒硅光致发光的研究

Photoluminescence Studies of the Erbium Implanted Silicon

采用PECVD法生长的无定型硅和直拉晶体硅为衬底注入Er3+ 离子的掺铒硅 ,经快速退火后在 15K至 2 93K下均可获得波长为 1 54μm的很强的光致发光。研究了不同的氧含量、退火温度、测量温度和激发功率对掺铒硅光致发光强度的影响和规律 。

The photoluminescence of the two types of silicon materials was studied,one is the amorphous silicon films grown on Si substrate by plasma enhanced chemical vapor deposition and doped with erbium;the other is the Si single crystal wafer with erbium ions implanted at room temperature.Photoluminescence of a wavelength of 1.54 μm was observed from 15 K to room temperature for these thermally annealed Si samples.Dependence of photoluminescence intensity on various parameters including oxygen content,annealing temperatures and excitation power were studied to understand the mechanism of the photoluminescence excitation.