射频溅射法制取ZnS·Ag发光薄膜

ZnS·Ag Cathodoluminescent Thin Film Deposited By RF-sputtering

用烧结ZnS·Ag蓝色荧光粉靶在钇铝柘榴石单晶基片上射频溅射制取了ZnS·Ag蓝色发光薄膜。讨论了基片温度及放电气体中H2 S的含量对薄膜发光特性的影响。实验表明 ,基片加热温度应控制在 50 0℃左右 ,放电气体中H2 S含量应控制在 0 2 %左右 ,所制得的薄膜具有和P2 2 B1荧光粉相同的发光光谱。

ZnS·Ag cathodoluminescent thin films have been grown on yttrium aluminum garnet substrates by RF sputtering with sintered ZnS·Ag phosphor as a target.The influence of the substrate temperature and the gaseous content of H 2S in Ar on the luminescent characteristics of the thin films has been discussed.It was found that the substrate temperature and the content of H 2S in Ar should be controlled at 500 ℃ and 0 2% respectively to grow high quality films.The spectra of the films are identical to that of ZnS·Ag phosphor powder.