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基于Volterra级数的HBT功率放大器负载阻抗的优化设计

Optimization of Load Impedance in HBT Power Amplifier Using Volterra Series
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摘要 利用Volterra级数法,研究了InGaP/GaAs HBT功率放大器的非线性失真,分析了非线性指标IP3和功率放大器负载阻抗的关系,完成了功率放大器负载阻抗的优化设计;采用2μmInGaP/GaAs HBT半导体工艺进行流片。测试结果表明,设计的功率放大器在不影响输出功率和功率附加效率的前提下,线性度得到较大改善,IP3提高6 dB,与理论分析及计算机仿真结果相吻合。 Nonlinear distortion of InGaP/GaAs HBT power amplifier（PA） was studied by using Volterra Series.Relation between IP3 and load impedance of PA was analyzed.Output impedance of the PA was also optimized.The circuit was designed and fabricated in 2 μm InGaP/GaAs HBT technology.Measurement results showed that the proposed power amplifier had an improved linearity and IP3,with negligible degradation of output power and efficiency,which are in good agreement with theoretical analysis and computer simulation.
作者 滑育楠 梁聪 张晓东 高怀
机构地区 东南大学国家ASIC系统工程中心 苏州工业园区教育投资发展有限公司 苏州英诺迅科技有限公司射频功率器件及电路技术中心
出处 《微电子学》 CAS CSCD 北大核心 2010年第6期844-847,856,共5页 Microelectronics
关键词 功率放大器 VOLTERRA级数 负载阻抗 INGAP/GAAS HBT Power amplifier Volterra series Load impedance InGaP/GaAs HBT
分类号 TN722.75 [电子电信—电路与系统]
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参考文献8

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微电子学
2010年 第6期

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