摘要
Heteroepitaxial undoped ZnO films were grown on Si (100) substrates by radio-frequency reactive sputtering, and then some of the samples were annealed at N2-800℃ (Sample 1, S1) and 02-800℃ (Sample 2, S2) for 1 h, respectively. The electrical transport characteristics of a ZnO/p-Si heterojunction were investigated. We found two interesting phenomena. First, the temperature coefficients of grain boundary resistances of S 1 were positive (positive temperature coefficients, PTC) while that of both the as-grown sample and S2 were negative (negative temperature coefficients, NTC). Second, the I-V properties of S2 were similar to those common p-n junctions while that of both the as-grown sample and S 1 had double Schottky barrier behaviors, which were in contradiction with the ideal p-n heterojunction model. Combined with the deep level transient spectra results, this revealed that the concentrations of intrinsic defects in ZnO grains and the densities of interfacial states in ZnO/p-Si heterojunction varied with the different annealing ambiences, which caused the grain boundary barriers in ZnO/p-Si heterojunction to vary. This resulted in adjustment electrical properties ofZnO/p-Si heterojunction that may be suitable in various applications.
Heteroepitaxial undoped ZnO films were grown on Si (100) substrates by radio-frequency reactive sputtering, and then some of the samples were annealed at N2-800℃ (Sample 1, S1) and 02-800℃ (Sample 2, S2) for 1 h, respectively. The electrical transport characteristics of a ZnO/p-Si heterojunction were investigated. We found two interesting phenomena. First, the temperature coefficients of grain boundary resistances of S 1 were positive (positive temperature coefficients, PTC) while that of both the as-grown sample and S2 were negative (negative temperature coefficients, NTC). Second, the I-V properties of S2 were similar to those common p-n junctions while that of both the as-grown sample and S 1 had double Schottky barrier behaviors, which were in contradiction with the ideal p-n heterojunction model. Combined with the deep level transient spectra results, this revealed that the concentrations of intrinsic defects in ZnO grains and the densities of interfacial states in ZnO/p-Si heterojunction varied with the different annealing ambiences, which caused the grain boundary barriers in ZnO/p-Si heterojunction to vary. This resulted in adjustment electrical properties ofZnO/p-Si heterojunction that may be suitable in various applications.
基金
Project supported by the National Natural Science Foundation of China(Nos.50472009,10474091,50532070)