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Effect of trapped charge accumulation on the retention of charge trapping memory

Effect of trapped charge accumulation on the retention of charge trapping memory
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摘要 The accumulation process of trapped charges in a TANOS cell during P/E cycling is investigated via numerical simulation. The recombination process between trapped charges is an important issue on the retention of charge trapping memory. Our results show that accumulated trapped holes during P/E cycling can have an influence on retention, and the recombination mechanism between trapped charges should be taken into account when evaluating the retention capability of TANOS. The accumulation process of trapped charges in a TANOS cell during P/E cycling is investigated via numerical simulation. The recombination process between trapped charges is an important issue on the retention of charge trapping memory. Our results show that accumulated trapped holes during P/E cycling can have an influence on retention, and the recombination mechanism between trapped charges should be taken into account when evaluating the retention capability of TANOS.
作者 金锐 刘晓彦 杜刚 康晋锋 韩汝琦
机构地区 Institute of Microelectronics
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第12期90-93,共4页 半导体学报（英文版）
基金 Project supported by Samsung Electronics Co.Ltd.(Nos.20060001050,2006CB302705)
关键词 charge accumulation charge trapping memory retention characteristic charge accumulation charge trapping memory retention characteristic
分类号 O472.4 [理学—半导体物理]
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参考文献10

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Journal of Semiconductors
2010年 第12期

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