SiC/ZnO/Si镶嵌结构的光致发光研究

Study of the photoluminescence of SiC/ZnO/Si complex film

采用磁控溅射法制备了SiC/ZnO/Si镶嵌结构复合薄膜,对样品采用了不同的温度进行退火处理,测定了样品的光致发光图谱。结果显示,复合薄膜的光致发光强度较单体薄膜有一定的增强,主要原因是发光复合中心的多元化和分布浓度的增加;随着退火温度的不同,各峰位的变化趋势有所不同。

Nano-crystalline SiC/ZnO/Si films was prepared by radio frequency（RF）magnetron co-sputtering,and adopting subsequent high temperature annealing.Analyzed the photoluminescence（PL）of the film,observed that the anneal temperature higher,the intensity enhanced,the main reason is the increasing of luminescent centers.The new summit of photoluminescence means that there are new luminescent centers appeared in the complex film,and the PL of sample under conditions of different annealing temperatures can also proved that.