摘要
With sidegating bias,hysteresis of sidegating effect is usually observed in drain current.The experimental results presented in this letter demonstrate that the hysteresis with time-based characteristics is closely related to EL2 traps and channel-substrate(C-S)junction peculiarities.The response of depletion region of C-S junction to the electron capture and emission by trap-EL2 plays an important role in the hysteresis.Furthermore,a new mechanism is proposed to explain the time-based characteristics of hysteresis,i.e.,there is a "steady-state" in which the hysteresis disappears.
With sidegating bias, hysteresis of sidegating effect is usually observed in drain current. The experimental results presented in this letter demonstrate that the hysteresis with time-based characteristics is closely related to EL2 traps and channel-substrate （C-S） junction peculiarities. The response of depletion region of C-S junction to the electron capture and emission by trap-EL2 plays an important role in the hysteresis. Furthermore, a new mechanism is proposed to explain the time-based characteristics of hysteresis, i.e., there is a ＂steady-state＂ in which the hysteresis disappears.
