低损耗高介电常数CCTO陶瓷的制备与性能研究

Preparation and properties studies of high permittivity and low dielectric loss CCTO ceramics

为了降低CaCu3Ti4O12(CCTO)陶瓷材料的介质损耗,采用传统固相反应法制备了组分为CaCu3–yZry/2Ti4O12(CCZTO)的陶瓷样品。研究了ZrO2掺杂对CCTO陶瓷性能的影响。结果表明:所制CCZTO陶瓷样品在维持了CCTO陶瓷材料介电常数大、低频介电常数随频率和温度变化小的优点的同时,介质损耗大幅降低;其介电常数和介质损耗的指标满足美国电子工业协会EIAZ5U标准,而温度系数αc性能指标优于EIAX7A标准所规定的±55×10–6/℃,是一种综合性能技术指标优良的新型高介电常数陶瓷材料。

In order to reduce the dielectric loss of CaCu3Ti4O12（CCTO） ceramics to a sufficiently low level,CaCu3–yZry/2Ti4O12（CCZTO） ceramics were prepared by the solid state reaction method.The effects of ZrO2 doping on the properties of CCTO ceramics were studied.The results show that ZrO2 doping significantly reduces the dielectric loss of CCTO ceramics,however,shows little effect on the other dielectric properties of CCTO ceramics.The prepared CCZTO ceramics show high dielectric constant and low dielectric loss,and their low-frequency dielectric constants vary slightly with temperature and frequency.The dielectric constant and loss of the CCZTO ceramics meet the requirements of EIAZ5U from the Electronic Industries Alliance,while the temperature coefficient of dielectric constant（TMK） exceeds the requirements of EIAX7A.This indicates that the prepared CCZTO ceramics is a novel kind of high performance high dielectric constant ceramics with a wide variety of potential applications.