摘要
用直流平面磁控溅射沉积薄膜的方法在Si和玻璃基片上制备了Ta2O5／TiO5混合薄膜。薄膜的透射光谱研究结果表明，在TiO2掺入浓度为0到17％，薄膜的折射率从2.08到2.23。薄膜折射率与掺入TiO2的浓度是近线性关系。薄膜的MOS电容器的I—V和C－V测量表明，经过退火处理能够提高Ta2O5／TiO2混合薄膜的介电常数。
Ta2O5/TiO2 thin films were grown on glass and Si substrates by dc reactive magnetronsputtering. The composition of Ta2O5/TiO2 films was adjustal by suitable selection of the arearation of the superposed tantalum and titantitum plates. The transmission spectra measurementshowed that all as-depsoited Ta2O5/TiO2 films have high transmission above 60%. Therefractive index of the compostie film was found to vary almost linearly with composite, say,the refractive index varied from 2.08 to 2.23 as a function of TiO2 concentration from 0 to17%. The capactitance - voltage (C-V) measurement of Ta2O5/TiO2 films in the Metal-Oxide-Semiconductor (MOS) capacitor could be performed and the accumulation, depletionand inversion phenomena were clearly indicated. The electrical and dielectric properties ofTa2O5/TiO2 films were strongly dependent on the TiO2 concentration of composite films andpost-deposition annealing treatment. These results showed that high temperature annealing improved significantly the dielectrical characteristics of Ta2O5/TiO2 films, While TiO2 has no effecton improving the dielectric and insulating properties of Ta2O5 film.
基金
国家自然科学基金!29683001
关键词
二氧化钛
五氧化二钽
磁控溅射
混合薄膜
薄膜
Optical properties Electrical properties Magnetron sputtering Ta_2O_5/TiO_2
