期刊文献+

准分子真空紫外改善材料表面结构与性能的研究 被引量:1

Study on surface structure and properties of materials modified with excimer vacuum ultraviolet
下载PDF
导出
摘要 简述了准分子VUV光源及反应器的结构与特点,用氙172nm真空紫外灯在不同气氛条件下照射氧化铜片、聚丙烯板(PP)、镀金薄膜,以光电子能谱、全反射红外光谱等分析材料表面,研究材料表面结构与性能的变化.结果表明,控制反应气氛,室温下172nm VUV即可清除铜片表面的污染物,还原铜片表面的氧化膜及活化镀金薄膜,在PP表面引入羟基或羰基,能有效地改善材料的表面性能. The configuration and features of the DBD excimer VUV lamp as well as VUV reactor were introduced briefly and the surface modification of materials with VUV was conducted. Oxidized copper sheets,polypropylene plates and gold plated pads on substrates were exposed to the emissions of Xe excimer 172 nm lamps in different gaseous environments at ambient temperature; the structure and properties of the surface were analyzed with X-ray Photoelectron Spectroscope and attenuated total reflectance FTIR. At ambient temperature and proper gaseous conditions,the 172 nm VUV can removed contaminants from the copper sheets,reduced cupric oxides into copper metal,activated the gold pads and introduce hydroxyl and carbonyl groups into the plastic surface. Xe excimer 172 nm VUV lamps can improve surface performance of materials efficiently.
出处 《材料研究与应用》 CAS 2010年第4期421-427,共7页 Materials Research and Application
关键词 真空紫外 表面改性 氧化铜还原 表面清洗 表面活化 vacuum ultraviolet surface modification cupric oxide reduction surface cleaning surface activation
  • 相关文献

参考文献7

  • 1SOSNIN E A,OPPENLANDER T.Application of capactive and barrier discharge excilamps in photoscience[J].J Photochem & Photobiology C,2006 (7):145-163.
  • 2SCHREIBER A,KUHN B,ARNOLD E et al.Radiation resistance of quartz glass for VUV discharge lamps[J].J Phys D:Appl Phys,2005,38:3242-3250.
  • 3MATSUZAWA S,SUMITOMO T,YOSHIOKA M et al.Improved emission intensity of rare gas flow excimer lamps[C] //Institute of Physics Conference Series.Toulouse:Institute of Physics Publishing,2004:175-176.
  • 4SCHITZ D V,LOMAEV M I.Large-aperture excilamps for microelectronic applications.Proceedings of SPIE 2009[C].San Jose:The International Society for Optical Engineering,2009.
  • 5KOGELSCHATZ U.Dielectric-barrier discharges:their history,discharge physics,and industrial applications[J].Plasma Chemistry & Plasma Processing,2003,23:1-46.
  • 6李建雄,刘安华.准分子真空紫外辐射在材料加工中的研究与应用[J].化工新型材料,2010,38(3):34-37. 被引量:4
  • 7UNAMI1N,SAKUMA K.Effects of excimer irradiation treatment on thermocompression Au-Au bonding[J].Jpn J Appl Phys,2010,49 (6):06GN121-06GN124.

二级参考文献3

共引文献3

同被引文献9

  • 1LINDELL L, BURQUEL A, JAKOBSSON F I. E, et al. Transparent, plastic, low-work-function poly ( 3,4-ethyl- enedioxythiophene) electrodes[J]. Chem Mater, 2006, 18 : 4246-4252.
  • 2MADL C M,KARIUKI P N,GENDRON J,et al. Vapor phase polymerization of poly (3, 4-ethylenedioxythio- phene) on flexible substrates for enhanced transparent e- lectrodes[J]. Synth Met 2011, 161: 1159-1165.
  • 3CHELAWAT H, VADDIRAJU S, GI.EASON K. Con- formal,conducting poty(3, 4-ethylenedioxy- thiophene) thin films deposited using bromine as the oxidant in a completely dry oxidantive chemical vapor deposition process[J]. Chem Mater,2010, 22:2864-2868.
  • 4FABRETTO M V, EVANS D R, MUELLER M, et al. Polymeric material with metal-like conductivity for next generation organic electronic devices[J]. Chem Mater, 2012, 24:3998-4003.
  • 5WINTHER-JENSEN B, WEST K. Vapor-phase poly- merization of 3, 4-ethylenedioxythiophene: a route to highly conducting polymer surface layers[J]. Macromol- ecules, 2004, 37: 4538-4543.
  • 6LI Jianxiong, LIU Anhua. Reduction of copper oxide in- duced by 172 nm vacuum ultraviolet radiation at ambient temperature[J]. J Electron Mater, 2011,40:2105-2110.
  • 7李建雄,刘安华.准分子真空紫外辐射在材料加工中的研究与应用[J].化工新型材料,2010,38(3):34-37. 被引量:4
  • 8张美娟,李建雄,刘安华,郭宝春.液相沉积聚合法制备的聚3,4-乙撑二氧噻吩(PEDOT)薄膜[J].高分子材料科学与工程,2013,29(4):129-132. 被引量:7
  • 9张美娟,李建雄,刘安华.聚3,4-乙撑二氧噻吩薄膜制备的研究进展[J].化工新型材料,2013,41(4):175-177. 被引量:6

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部