电弧离子镀AlN薄膜的光致发光性能的研究

Study on the photoluminescense properties of AlN and Cu-doped AlN films deposited by cathodic arc ion plating

在电弧离子镀弧靶前加挡板以去除大颗粒污染,分别在Si(100)基底上制备非掺杂的纯AlN薄膜,在石英玻璃基底上制备Cu掺杂的AlN薄膜.用X射线衍射(XRD)分析表明,纯AlN膜为弱(100)多晶织构,而掺Cu的AlN薄膜为非晶结构;X射线光电子能谱(XPS)研究表明,Cu掺杂AlN薄膜中,Cu为+1价,原子百分含量为11%;光致发光谱显示纯AlN薄膜发紫光(～400nm),Cu掺杂的AlN薄膜发蓝光(～450nm).

A shield plate was positioned in front of the cathodic arc target to reduce macro-droplets in the film deposited by cathodic arc ion plating method. The pure AlN thin film was deposited on Si（100） substrate and Cu-doped AlN thin film on quartz glass substrate. The characterization of as-deposited films were investigated by X-ray diffraction （XRD）,X-ray photoelectron spectroscopy （XPS） and fluorescence spectrometer. The pure AlN film shows unconspicuous （100） preferential orientation and the Cu-doped AlN thin film is amorphous state; the Cu atom ratio in Cu-doped AlN thin film is 11%,and univalent Cu ion is existed and has a little impurity in this film; Moreover,violent light（~400 nn）emission was observed in A1N film,whereas,blue light（~450 nm） emission was observed in Cu-doped A1N film.