摘要
基于0.6μm BICMOS(双极型互补金属氧化物半导体)工艺设计了一种具有分段曲率补偿的高精度带隙基准电压源.对该分段曲率补偿电路产生不同温度区间的正温度系数电流进行补偿,且所需的补偿支路可根据实际电路要求进行设定.基准核心电路采用无运算放大器结构,形成负反馈环路稳定输出电压.同时设计了预校准电路,提高了电源抑制比.利用cadence工具仿真结果表明,在-40~125℃范围内基准电压的温度系数仅为0.3×10-6/℃,电源抑制比达到-104dB.
A high precision bandgap reference with a piecewise curvature compensated circuit was presented based on 0.6 um BICMOS(bipolar complementary metal oxide semiconductor) process.The piecewise curvature compensated circuit generates PTAT(proportional to absolute temperature) current during different temperature ranges,and the sub-range compensation block can be designed according to the requirements of actual application.Without using operational amplifier,the bandgap reference adopts negative feedback loop to stabilize the output voltage.The introduction of pre-regulator circuit can improve the power supply rejection ratio(PSRR)effectively.Simulations with cadence show that the achieved temperature coefficient was only 0.3×10 -6/℃ in-40-125℃ and the PSRR was up to-104 dB.
出处
《华中科技大学学报(自然科学版)》
EI
CAS
CSCD
北大核心
2010年第12期40-43,共4页
Journal of Huazhong University of Science and Technology(Natural Science Edition)
基金
国家自然科学基金资助项目(60876023)
超高速电路设计与电磁兼容教育部重点实验室基金资助项目
关键词
带隙基准
双极型互补金属氧化物半导体
温度系数
曲率补偿
电源抑制比
高精度
bandgap reference bipolar complementary metal oxide semiconductor temperature coefficient curvature compensation power supply rejection ratio high precision