摘要
利用射频磁控溅射技术在不同温度的(100)Si和玻璃衬底上成功地制备了c轴择优取向的Mg_(0.1)Zn_(0.9)O薄膜。通过X射线衍射(XRD)、场发射扫描电镜(FESEM)、紫外可见光分光光度计和光致发光谱研究了衬底温度对Mg_(0.1)Zn_(0.9)O薄膜结构、表面形貌和光学性能的影响,结果表明,在衬底温度为400℃时生长的Mg_(0.1)Zn_(0.9)O薄膜具有很好的c轴取向和较好的光学性能。用激发波长为300nm的氙灯作为激发光源得到不同衬底温度下Mg_(0.1)Zn_(0.9)O薄膜的室温PL谱。分析表明,紫外发光峰与薄膜的结晶质量密切相关,蓝光发射与氧空位有关。简单探讨了衬底温度影响紫外光致发光峰红移和蓝移的可能机理。
Highly c-axis oriented Mg0.1Zn0.9O thin films are fabricated on （100）Si and glass substrates at different temperature by RF magnetron sputtering. The influence of the suhstrate temperature on the structure, surface morphology and optical properties of Mg0.1Zn0.9O thin films are studied by XRD, SEM, UV-visible spectrometer and photoluminescence （PL） spectra. The results indicate that the Mg0.1Zn0.9O thin films grown at substrate temperature of 400℃ show good c-axis orientation and optical properties. Different PL spectra of Mg0.1Zn0.9O thin films are acquired at room temperature using xenon lamps as excitation light sources with excitation wavelengths of 300nm, The intensity of UV PL peaks is related to crystalline quality, and the blue-green peaks may be related to the oxygen vacancies. The physical mechanism throngh which the substrate temperature affects the red shift and blue shift of UV PL peaks is also discussed.
基金
北京市教育委员会科技计划面上项目(KM200810017009)
