掺杂SnO_2基导电陶瓷的制备及性能研究

Preparation and Properties of Doped Tin Dioxide Ceramics

以氧化锡(SnO_2)、五氧化二铌(Nb_2O_5)和三氧化二锑(Sb_2O_3)粉末为原料,通过无压固相烧结技术制备了SnO_2基导电陶瓷,研究了Nb_2O_5单掺杂及Nb_2O_5-Sb_2O_3双掺杂SnO_2基陶瓷的电导率和热膨胀性。采用X射线衍射仪对试样物相结构进行了表征。研究发现,当Nb_2O_5掺杂量为14%(摩尔分数,下同)时,SnO_2基陶瓷800℃的电导率达10.51S/cm;在此基础上,当Sb_2O_3添加量为2%时,500℃的电导率达1.61S/cm。SnO_2-Nb_2O_5基陶瓷的热膨胀系数随Nb_2O_5掺杂量的增加而降低,Sb_2O_3的添加使SnO_2基陶瓷的热膨胀系数增大。X射线衍射仪分析结果表明,Nb_2O_5能均匀分布在SnO_2粉末中,形成稳定的固溶体;Sb_2O_3的添加不利于Nb_2O_5形成稳定的固溶体。

Tin dioxide based ceramics doped with Nb2O5 and Sb2O3 are prepared by the pressureless sintering. Bulk conductivity and thermal expansion coefficient are measured. Results show that the conductivity of tin dioxide based ceramics is 10. 51S/cm at 800℃ when the content of Nb2O5 is 14mol%; Based on this component, conductivity of tin dioxide ceramics doped with Nb2O5-Sb2O3 is 1.61S/cm at 500℃ when the content of Sb2O3 is 2mol%. Thermal expansion coefficient of SnO2-Nb2O5 declines with the content of Nb2O5 increasing. The phase of SnO2-Nb2O5 is analyzed by X-ray diffraction, and the results show that it is rutite crystal structure, implying that Nb2O5 is uniformly distributed into SnO2 and forms solid solution. But Sh2O5 is bad for forming solid solution.